测试技术学报2026，Vol.40Issue(3)：282-288,7.DOI:10.62756/csjs.1671-7449.2026018
高Mg浓度Zn1-xMgxO薄膜的铁电性能研究
Ferroelectric Properties of Zn1-xMgxO Thin Films with High Magnesium Content
摘要
Abstract
As an emerging wurtzite ferroelectric,Zn ₁-ₓMgₓO has become a focal point in ferroelectric research.However,its narrow composition window has limited practical applications in non-volatile memory devices.Using reactive magnetron sputtering,Zn₁-ₓMgₓO thin films were grown on(100)-Si sub-strates at room temperature,extending the ferroelectric composition range to 0.37≤x≤0.54.X-ray dif-fraction(XRD)results indicate that all films exhibit good crystallinity with a c-axis preferred orientation.Notably,the coexistence of rock-salt and wurtzite phases was observed in films with x>0.48.Scanning electron microscopy(SEM)reveals that a gradual morphological transition of grain clusters from dome-like to quadrilateral configurations is induced by the increased Mg content.Electrical characterization dem-onstrates composition-dependent ferroelectric properties:remanent polarization(Pr)decreases from 74 μC·cm-2 to 35 μC·cm-2,while coercive field(Ec)remains below 3 MV·cm⁻¹.The reduction in Pr likely originates from the increased fraction of non-polar phases,whereas the rise in Ec may be associated with the combined effects of interfacial stress and Mg doping.关键词
Zn1-xMgxO薄膜/纤锌矿铁电材料/高Mg含量/相分离Key words
Zn1-xMgxO thin films/wurtzite ferroelectric materials/high-Mg-content/phase separation分类
通用工业技术引用本文复制引用
朱龙潇,周大雨,赵文瑾,隋金洋,童祎,王新朋..高Mg浓度Zn1-xMgxO薄膜的铁电性能研究[J].测试技术学报,2026,40(3):282-288,7.基金项目
国家自然科学基金资助项目(52472120) （52472120）
中央高校基本科研业务资助项目(DUT24LAB117) （DUT24LAB117）
苏州实验室科研项目(SK-1202-2024-012) （SK-1202-2024-012）
