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Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors

Shili Xiang Zhipeng Yu Hong Yin Qichao Ding Jun Liu Hao Hu Bo Zhao Shuangzan Lu Fan Huang Joao Cunha José Rodrigues

纳米材料科学(英文版)2026，Vol.8Issue(3)：518-533,16.

纳米材料科学(英文版)2026，Vol.8Issue(3)：518-533,16.DOI:10.1016/j.nanoms.2024.09.006

Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors

Shili Xiang ¹Zhipeng Yu ²Hong Yin ³Qichao Ding ¹Jun Liu ¹Hao Hu ¹Bo Zhao ¹Shuangzan Lu ¹Fan Huang ¹Joao Cunha ²José Rodrigues²

作者信息

1. JFS Laboratory,Wuhan 430206,China
2. International Iberian Nanotechnology Laboratory(INL),Av.Mestre Jose Veiga,4715330,Braga,Portugal
3. International Iberian Nanotechnology Laboratory(INL),Av.Mestre Jose Veiga,4715330,Braga,Portugal||Key Laboratory of Hunan Province for Advanced Carbon-based Functional Materials,School of Chemistry and Chemical Engineering,Hunan Institute of Science and Technology,Yueyang 414006,China
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摘要

关键词

GaN HEMTs/Floating T-gate/E-Beam photoresists/Fabrication techniques

Key words

GaN HEMTs/Floating T-gate/E-Beam photoresists/Fabrication techniques

引用本文复制引用

Shili Xiang,Zhipeng Yu,Hong Yin,Qichao Ding,Jun Liu,Hao Hu,Bo Zhao,Shuangzan Lu,Fan Huang,Joao Cunha,José Rodrigues..Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors[J].纳米材料科学(英文版),2026,8(3):518-533,16.

基金项目

This work was supported by the National Natural Science Foundation of China(Nos.52271211 and 22405080),the Natural Science Founda-tion of Hubei Province of China(Nos.2023AFB547 and 2022CFB858) （Nos.52271211 and 22405080）

the Guang dong Academy of Sciences(No.2021GDASYL-20210103077) （No.2021GDASYL-20210103077）

the Science and technology innovation Program of Hunan Province of China(No.2023RC3185),and the HORIZON-Marie Skłodowska-Curie Actions-2021-PF(No.101065098),European Union.We also thank the Process Center of Hubei Jiufengshan Laboratory(JFS)for their guidance,which was helpful to widen the view on the subject. （No.2023RC3185）

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