人工晶体学报2026，Vol.55Issue(4)：609-618,10.DOI:10.16553/j.cnki.issn1000-985x.2025.0232
P-NiO/β-Ga2O3异质结横向肖特基势垒二极管电学特性仿真研究
Simulation Study on Electrical Characteristics of P-NiO/β-Ga2O3 Heterojunction Lateral Schottky Barrier Diodes
摘要
Abstract
Gallium oxide(β-Ga2O3)is endowed with broad application prospects in the field of power devices,as it possesses a wide bandgap,a high critical breakdown electric field,and low-cost substrates.However,the development of β-Ga2O3 homojunction Schottky barrier diodes(SBD)is restricted by the bottleneck of P-type doping technology.To address this issue,a P-NiO/β-Ga2O3 heterojunction SBD structure was proposed,in which P-NiO was used to replace P-typeβ-Ga2O3.The effects of P-NiO doping concentration,P-NiO thickness(W),and anode length(La)on the electrical properties of devices were studied by means of Sentaurus TCAD software.The results show that the increase of P-NiO doping concentration leads to the expansion of the depletion region to the side of the β-Ga2O3 material,resulting in the improvement of the uniformity of the electric field distribution.When the P-NiO doping concentration is 3×1018 cm-3,the performance is the best.At this time,the specific on-resistance(Ron,sp)is 1.411 mΩ·cm2,the reverse breakdown voltage is 3 312.2 V,and the power figure of merit(PFOM)is 7.77 GW/cm2.La and W are further optimized to alleviate the edge electric field concentration effect.Finally,the Ron,sp of the device reduces to 0.823 mΩ·cm2,the reverse breakdown voltage increases to 3 638.3 V,and the PFOM reaches 16.08 GW/cm2.The structure of this paper provides a theoretical basis for the design and development of high performanceβ-Ga2O3 SBD.关键词
氧化镓/氧化镍/肖特基势垒二极管/比导通电阻/击穿电压/功率品质因数/仿真研究Key words
gallium oxide/nickel oxide/Schottky barrier diode/specific on-resistance/breakdown voltage/power figure of merit/simulation study分类
信息技术与安全科学引用本文复制引用
刘晋花,余建刚,李子唯,李旺旺,杨晓利,雷程,梁庭..P-NiO/β-Ga2O3异质结横向肖特基势垒二极管电学特性仿真研究[J].人工晶体学报,2026,55(4):609-618,10.基金项目
山西省重点研发计划(202302030201001) （202302030201001）
国家自然科学基金(62301509) （62301509）
中国博士后科学基金(2024MD754039) （2024MD754039）
山西省基础研究计划青年项目(202203021212191) （202203021212191）
国家自然科学基金专项项目(62441110) （62441110）
仪器科学与动态测试教育部重点实验室开放基金(JYBSYSKFJJ319008) （JYBSYSKFJJ319008）
