液晶与显示2026，Vol.41Issue(4)：509-522,14.DOI:10.37188/CJLCD.2026-0036
氧化物半导体薄膜晶体管的研发现状与发展趋势分析
Analysis of research status and development trends in oxide semiconductor thin-film transistors
摘要
Abstract
Oxide semiconductor thin-film transistor(OS TFT)has become a core driving component of high-end display technology due to its advantages such as high mobility,excellent uniformity and low manufacturing cost,and is gradually expanding into integrated system fields such as sensors,memory,and neuromorphic computing.Based on the Web of Science and Incopat databases,this paper conducts a systematic analysis on the scientific research papers and patent data in the field of OS TFT from 2016 to 2025.Research has found that global R&D activities are highly concentrated in East Asia,with China and South Korea leading in the output of papers and patents.However,there is a clear academic-industry imbalance in this field:over 90%of the papers come from universities and research institutes,while 81.01%of the patents are held by enterprises,and the transformation of research into applications is insufficient.Meanwhile,the concentration of patents is relatively low,and technological barriers have yet to be formed.The key upstream material,sputtering targets,are still dominated by Japan(accounting for 54.55%),posing a potential risk to the security of China's industrial chain.In the future,OS TFT is poised to move beyond conventional display driving,forging deep convergence with sensor,memory,and neuromorphic computing.关键词
氧化物半导体薄膜晶体管/显示/传感/存储/类脑计算Key words
oxide semiconductor thin-film transistors/display/sensor/memory/neuromorphic computing分类
信息技术与安全科学引用本文复制引用
熊雨婷,任俊彦,梁凌燕,曹鸿涛..氧化物半导体薄膜晶体管的研发现状与发展趋势分析[J].液晶与显示,2026,41(4):509-522,14.基金项目
国家重点研发计划(No.2024YFB3614200)Supported by National Key Research and Development Program of China(No.2024YFB3614200) （No.2024YFB3614200）
