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Research progress in gallium nitride-based artificial synaptic devices

Fangliang Gao Lihan Li Shuti Li

eScience2026，Vol.6Issue(3)：P.114-162,49.

eScience2026，Vol.6Issue(3)：P.114-162,49.DOI:10.1016/j.esci.2025.100519

Research progress in gallium nitride-based artificial synaptic devices

Fangliang Gao ¹Lihan Li ¹Shuti Li¹

作者信息

1. Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices,School of Electronic Science and Engineering(School of Microelectronics),South China Normal University,Foshan 528225,China
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摘要

关键词

Gallium nitride/Artificial synapse/Neuromorphic computing

分类

信息技术与安全科学

引用本文复制引用

Fangliang Gao,Lihan Li,Shuti Li..Research progress in gallium nitride-based artificial synaptic devices[J].eScience,2026,6(3):P.114-162,49.

基金项目

supported by the National Natural Science Foundation of China(Grant Nos.62375090,52002135 and 62374062) （Grant Nos.62375090,52002135 and 62374062）

Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2024A1515140064,2023B1515120071,2023A0505050131,2022A0505050066,and 2024A1515011081) （Grant Nos.2024A1515140064,2023B1515120071,2023A0505050131,2022A0505050066,and 2024A1515011081）

the Characteristic Innovation Project of Universities in Guangdong Province(Grant No.2023KTSCX028) （Grant No.2023KTSCX028）

the Science and Technology Program of Guangzhou,China(Grant No.2024A04J6456). （Grant No.2024A04J6456）

eScience

ISSN：2667-1417

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