首页|期刊导航|Journal of Magnesium and Alloys|P-type Li_(y)Ni_(1-x-y)Mg_(x)O:A promising ultrawide bandgap semiconductor for Ga_(2)O_(3) power devices applications
Journal of Magnesium and Alloys2026,Vol.15Issue(2):P.332-349,18.DOI:10.1016/j.jma.2025.10.005
P-type Li_(y)Ni_(1-x-y)Mg_(x)O:A promising ultrawide bandgap semiconductor for Ga_(2)O_(3) power devices applications
摘要
关键词
Power electronics/β-Ga_(2)O_(3)/LiyNi1-x-yMgxO/Threshold voltage/Breakdown voltage分类
信息技术与安全科学引用本文复制引用
Madani Labed,Ho Jung Jeon,Jang Hyeok Park,Kwangsik Jeong,You Seung Rim..P-type Li_(y)Ni_(1-x-y)Mg_(x)O:A promising ultrawide bandgap semiconductor for Ga_(2)O_(3) power devices applications[J].Journal of Magnesium and Alloys,2026,15(2):P.332-349,18.基金项目
supported by the MSIT(Ministry of Science and ICT),Korea,under the ITRC(Information Technology Research Center)support program(IITP-2025-RS-2024-00438007)supervised by the IITP(Institute for Information&Communications Technology Planning&Evaluation) (Ministry of Science and ICT)
supported by the Technology Innovation Program(RS-2022-00144027 ()
Development of 1.2 kV-class low-loss gallium oxide transistor)funded by MOTIE. ()