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A Review of GaN HEMTs:Characteristics,Parameter Impacts,and Strategies for Oscillation Suppression

Jinchao Pan Yachao Ji Guidong Zhang Samson S.Yu Zhong Li

Chinese Journal of Electrical Engineering2026，Vol.12Issue(1)：P.260-286,27.

Chinese Journal of Electrical Engineering2026，Vol.12Issue(1)：P.260-286,27.DOI:10.23919/CJEE.2025.000147

A Review of GaN HEMTs:Characteristics,Parameter Impacts,and Strategies for Oscillation Suppression

Jinchao Pan ¹Yachao Ji ¹Guidong Zhang ¹Samson S.Yu ²Zhong Li³

作者信息

1. School of Automation,Guangdong University of Technology,Guangzhou 510006,China
2. School of Engineering,Deakin University,Victoria 3216,Australia
3. Faculty of Mathematics and Computer Science,FernUniversität in Hagen,Hagen 58084,Germany
折叠

摘要

关键词

GaN HEMT/characteristic analysis/parasitic parameters/oscillation suppression

分类

信息技术与安全科学

引用本文复制引用

Jinchao Pan,Yachao Ji,Guidong Zhang,Samson S.Yu,Zhong Li..A Review of GaN HEMTs:Characteristics,Parameter Impacts,and Strategies for Oscillation Suppression[J].Chinese Journal of Electrical Engineering,2026,12(1):P.260-286,27.

基金项目

Supported by the Guangdong Basic and Applied Basic Research Foundation(2023A1515240033)。（2023A1515240033）

Chinese Journal of Electrical Engineering

ISSN：2096-1529

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