电子器件2026，Vol.49Issue(2)：241-247,7.DOI:10.3969/j.issn.1005-9490.2026.02.001
一种快速瞬态响应无片外电容LDO的设计
Design of a Fast Transient Response LDO with No Off-Chip Capacitor
王家祥 1张涛1
作者信息
- 1. 武汉科技大学信息科学与工程学院,湖北 武汉 430081
- 折叠
摘要
Abstract
A fast transient response low-dropout regulator(LDO)with no off-chip capacitor is proposed.The NMOS is used to be the transistor of this LDO,and the gate of the NMOS transistor is coupled with the output of the error amplifier by offset capacitor to acceler-ate the gate response speed,the output slew rate of the error amplifier is increased by sampling the output current to generate a variable reference,which improves the transient response of the system.Based on HHGrace 0.35 μm BCD process,the simulation and test results show that the input voltage range of the system is 1.7 V～5.5 V,and the dynamic output range is 1.2 V～3.3 V,the downshoot voltage is 80 mV and the overshoot voltage is 112 mV when the output current jumps in the range of 10 mA～400 mA without external capacitor,and the system response time is less than 1.5 μs.关键词
低压差线性稳压器/无片外电容/快速瞬态响应/电荷泵/NMOSKey words
low-dropout regulator/no off-chip capacitor/fast transient response/charge pump/NMOS分类
信息技术与安全科学引用本文复制引用
王家祥,张涛..一种快速瞬态响应无片外电容LDO的设计[J].电子器件,2026,49(2):241-247,7.
