电子器件2026，Vol.49Issue(2)：260-265,6.DOI:10.3969/j.issn.1005-9490.2026.02.004
基于OLS码的DRAM型存储器单粒子功能中断加固设计研究
Study on the Design of Single-Event Functional Interrupt Reinforcement for DRAM Memory Based on OLS Code
摘要
Abstract
Energetic particles can trigger single or multi-bit errors in DRAM memories,and the traditional use of on-chip error correction codes or error detection and correction(EDAC)cores for error correction and detection is not a measure that can effectively respond to a memory chip when a single event functional interrupt(SEFI)occurs.For embedded applications,a 64-bit data word reinforcement algorithm based on OLS code protection is proposed,and the method is extended to 32-bit data word protection,and finally the designed protection circuit is verified by applying on a DDR3 SDRAM memory controller.The results show that the proposed method can effectively protect 32-bit and 64-bit data words when SEFI occurs in a single memory chip,with simple implementation and less logic resources.关键词
单粒子效应/DRAM/存储器/OLS码Key words
single event effect/DRAM/memory/OLS code分类
信息技术与安全科学引用本文复制引用
赵长啸,陈庭康,田毅,马世耀..基于OLS码的DRAM型存储器单粒子功能中断加固设计研究[J].电子器件,2026,49(2):260-265,6.基金项目
国家重点研发计划课题项目(2021YFB1600601) （2021YFB1600601）
天津市航空装备安全性与适航技术创新中心开放基金项目(JCZX-2022-KF-07) （JCZX-2022-KF-07）
