发光学报2026，Vol.47Issue(5)：828-834,7.DOI:10.37188/CJL.20260023
基于乙二醇亚相Langmuir-Blodgett技术的高性能量子点发光二极管
High-performance Quantum Dot Light-emitting Diode Based on Ethylene Glycol Subphase Langmuir-Blodgett Technique
摘要
Abstract
This study introduces ethylene glycol(EG)as an alternative subphase to water in the Langmuir-Blodgett(LB)technique for fabricating high-quality quantum dot(QD)films,aiming to overcome the limitations of conven-tional aqueous-phase LB processes,such as QD degradation and increased device leakage current.By optimizing LB deposition parameters,a uniform and densely packed monolayer QD film was achieved and employed as the emitting layer in red QLEDs.The use of an EG subphase effectively prevents water-induced erosion of QDs,while the opti-mized LB film significantly suppresses leakage current.As a result,the device exhibits outstanding electrolumines-cence performance:red emission peaked at 630 nm with a narrow full width at half maximum of 22 nm,a maximum external quantum efficiency of 26.1%,and an operational lifetime(T95)of 3 272 h at an initial luminance of 1 000 cd·m-2,markedly surpassing both conventional aqueous-phase LB devices and spin-coated reference devices.These findings demonstrate that the EG subphase LB strategy,through the mitigation of interfacial defects and leakage pathways,offers a promising fabrication route toward high-efficiency and long-lifetime QLEDs.关键词
量子点发光二极管(QLEDs)/朗缪尔-布洛杰特技术/单层量子点Key words
quantum-dot light-emitting diodes(QLEDs)/Langmuir-Blodgett technique/monolayer quantum dot分类
信息技术与安全科学引用本文复制引用
池瑾轩,谢潇婷,刘洋,李福山..基于乙二醇亚相Langmuir-Blodgett技术的高性能量子点发光二极管[J].发光学报,2026,47(5):828-834,7.基金项目
国家自然科学基金(52572156) Supported by National Natural Science Foundation of China(52572156) （52572156）
