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基于纳米压印和热调控转印的高分辨率量子点发光二极管

谢潇婷 林海燕 赵宇森 陈伟国 杨开宇

发光学报2026,Vol.47Issue(5):846-853,8.
发光学报2026,Vol.47Issue(5):846-853,8.DOI:10.37188/CJL.20260021

基于纳米压印和热调控转印的高分辨率量子点发光二极管

High-resolution Quantum Dot Light-emitting Diodes Based on Nanoimprint Lithography and Thermal-regulated Transfer Printing

谢潇婷 1林海燕 1赵宇森 1陈伟国 2杨开宇2

作者信息

  • 1. 福州大学 物理与信息工程学院,福建 福州 350108
  • 2. 福州大学 物理与信息工程学院,福建 福州 350108||中国福建省光电信息科技创新实验室,福建 福州 350108
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摘要

Abstract

Quantum dot light-emitting diodes(QLEDs),renowned for their high color purity,wide color gamut,and solution processability,are considered a pivotal technology for next-generation high-resolution displays.Howev-er,achieving high-resolution patterning without compromising the optical properties of quantum dots(QDs)remains a critical challenge hindering their practical application.Addressing this patterning bottleneck in high-resolution QLEDs fabrication,this work presents a novel patterning strategy based on nanoimprint lithography and thermally regulated transfer printing.The proposed method involves fabricating honeycomb microstructures on a polyvinyl buty-ral(PVB)surface using a silicon template,followed by selective filling of QDs controlled by solution wettability.Through a subsequent thermal-regulated transfer process,highly uniform QDs arrays with a feature size as small as 1.5 µm and a resolution of 9 072 pixels per inch(PPI)are successfully prepared.By employing higher-resolution templates,we have further achieved QDs array with a maximum pixel density of 25 400 PPI.Furthermore,we suc-cessfully fabricated high-resolution red QLEDs device(9 072 PPI)by integrating the QDs array onto hole trans-port layer(HTL),achieving a maximum external quantum efficiency(EQE)of 10.91%and a peak luminance of 164 421 cd/m².This work provides a stable and reproducible patterning pathway for the fabrication of high-resolution QLEDs.

关键词

量子点发光二极管(QLEDs)/高分辨率/纳米压印/热调控转印

Key words

quantum dot light-emitting diodes(QLEDs)/high-resolution/nanoimprint/thermal regulated transfer printing

分类

信息技术与安全科学

引用本文复制引用

谢潇婷,林海燕,赵宇森,陈伟国,杨开宇..基于纳米压印和热调控转印的高分辨率量子点发光二极管[J].发光学报,2026,47(5):846-853,8.

基金项目

国家重点研发计划(2022YFB3606500) (2022YFB3606500)

国家自然科学基金(62575071,62305063) (62575071,62305063)

福建省自然科学基金(2023J01257) Supported by National Key R&D Program of China(2022YFB3606500) (2023J01257)

National Natural Science Foundation of China(62575071,62305063) (62575071,62305063)

Provincial Natural Science Foundation of Fujian(2023J01257) (2023J01257)

发光学报

1000-7032

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