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InAs/GaInSb长波红外超晶格材料外延生长研究

李琛 蒋洞微 徐应强 倪海桥 王国伟 吴东海 郝宏玥 牛智川

红外与毫米波学报2026,Vol.45Issue(2):195-206,12.
红外与毫米波学报2026,Vol.45Issue(2):195-206,12.DOI:10.11972/j.issn.1001-9014.2026.02.001

InAs/GaInSb长波红外超晶格材料外延生长研究

Research on epitaxial growth of InAs/GaInSb long-wave infrared superlattice materials

李琛 1蒋洞微 2徐应强 2倪海桥 2王国伟 2吴东海 2郝宏玥 2牛智川2

作者信息

  • 1. 中国科学院半导体研究所 光电子材料与器件实验室,北京 100083||中国科学院大学,北京 101408
  • 2. 中国科学院半导体研究所 光电子材料与器件实验室,北京 100083
  • 折叠

摘要

Abstract

InAs/GaInSb type-Ⅱ superlattice(T2SL)materials exhibit significant advantages in long-wave(LWIR)and very long-wave infrared(VLWIR)detectors.By optimizing molecular beam epitaxy(MBE)growth parameters and in-terface control techniques,a 50-period short-period superlattice(SL)structure composed of 10 monolayer(ML)InAs/7 ML Ga0.75In0.25Sb was successfully grown at the GaSb reconstruction transition temperature.High-resolution X-ray dif-fraction(HRXRD)characterization revealed a lattice constant of 6.108 Å and a period thickness of 53.53 Å for the su-perlattice,with deviations from theoretical design values below 0.2%.The lattice mismatch with the GaSb substrate was only 0.197%.Atomic force microscopy(AFM)measurements demonstrated a root mean square(RMS)surface roughness of 1.67 Å,while photoluminescence(PL)spectroscopy indicated a bandgap of 89.9 meV.Furthermore,a 12 ML InAs/5 ML Al0.8In0.2Sb superlattice barrier material was epitaxially grown,exhibiting a lattice mismatch of 0.067%with the GaSb substrate.Experimental results confirm that both 10 ML InAs/7 ML Ga0.75In0.25Sb and 12 ML InAs/5 ML Al0.8In0.2Sb superlattices exhibit excellent lattice compatibility with the GaSb substrate.The presence of mul-tiple satellite diffraction peaks and superior interface quality further validate the structural integrity of the materials.These findings provide a critical material foundation for the development of high-performance infrared detectors.

关键词

分子束外延/三元组分超晶格/晶格匹配

Key words

molecular beam epitaxy(MBE)/ternary superlattices/lattice matching

分类

数理科学

引用本文复制引用

李琛,蒋洞微,徐应强,倪海桥,王国伟,吴东海,郝宏玥,牛智川..InAs/GaInSb长波红外超晶格材料外延生长研究[J].红外与毫米波学报,2026,45(2):195-206,12.

基金项目

国家重点技术研发计划(2019YFA0705203、2024YFA1208904) (2019YFA0705203、2024YFA1208904)

国家自然科学基金重大项目(61790581) (61790581)

西北稀有金属材料研究所特殊稀有金属材料国家重点实验室(SKL2023K00X) Supported by the National Key Technologies R&D Program of China(2019YFA0705203,2024YFA1208904) (SKL2023K00X)

the Major Program of the National Natural Science Foundation of China(61790581) (61790581)

the State Key Laboratory of Special Rare Metal Materials,the Northwest Rare Metal Materials Research Institute(SKL2023K00X) (SKL2023K00X)

红外与毫米波学报

1001-9014

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