红外与毫米波学报2026，Vol.45Issue(2)：227-235,9.DOI:10.11972/j.issn.1001-9014.2026.02.004
弱电离区场增强的Ge基PIN结构阻挡杂质带红外探测器
Field-enhanced Ge-based PIN structure blocked impurity band infrared detectors in weakly ionized regions
摘要
Abstract
A novel germanium(Ge)-based Blocked-Impurity-Band(BIB)infrared detector with a planar PIN struc-ture was developed,using a near-surface processing technique to fabricate the target and electrode contact regions.The detector demonstrates significant rectifying characteristics,exhibiting extremely low dark current under reverse bi-as,and its working temperature is extended to 15 K.At this temperature,the detector maintains a stable detectivi-ty of 6×10¹² cm·Hz¹/₂·W-¹ within the reverse bias voltage range of 0 V to-5 V.Through the band structure analysis,the dark current mechanism and the impact of temperature variation on optical response were discussed in detail,and the working principle based on the low-temperature weak ionization region was proposed.Additionally,tests of the detec-tor's blackbody response current and detectivity were systematically measured,and the mechanism of maintaining high performance at elevated working temperatures was clarified.The result provides innovative insights for enhancing the temperature performance of Ge-based BIB detectors and offers the theoretical and experimental support for the design and application of future infrared detectors.关键词
BIB探测器/能带结构/探测率/PIN结构Key words
BIB detector/band structure/detectivity/PIN structure分类
信息技术与安全科学引用本文复制引用
刘赤县,王鹏,邓惠勇,沈宏,戴宁,陈天业,王泽欣,胡清智,窦伟,刘晓艳,凌静威,潘昌翊,朱家旗..弱电离区场增强的Ge基PIN结构阻挡杂质带红外探测器[J].红外与毫米波学报,2026,45(2):227-235,9.基金项目
国家重点研发计划(2023YFA1608701),国家自然科学基金(62274168、11933006和U2141240)和杭州创新团队项目(TD2020002) Supported by the National Key R&D Program of China(2023YFA1608701),the National Natural Science Foundation of China(62274168,11933006 and U2141240),the Hangzhou Leading Innovation and Entrepreneurship Team(TD2020002) （2023YFA1608701）
