红外与毫米波学报2026，Vol.45Issue(2)：243-249,7.DOI:10.11972/j.issn.1001-9014.2026.02.006
InAs/GaSb Ⅱ类超晶格电学特性的研究
Research on the electrical properties of InAs/GaSb type-Ⅱ superlattices
摘要
Abstract
In order to investigate the electrical properties of InAs/GaSb type-Ⅱ superlattices,a lattice-matched AlAsSb electrical isolation layer was grown between the GaSb substrate and the InAs/GaSb type-Ⅱ superlattice epitaxial material to suppress the conductive effect of the substrate.Temperature-dependent Hall measurements revealed that the uninten-tionally doped superlattice exhibited N-type conductivity.As the P-type doping concentration increased,a carrier com-pensation was observed,with the conductivity type reversal occurring at 95 K and 230 K.Below the transition tempera-tures,P-type conductivity was exhibited,while above the transition temperatures,the material exhibited N-type conduc-tivity.The phenomenon was analyzed using the Fermi level model,and the results indicated that the transition tempera-ture for the conductivity type change increased with increasing doping concentration.关键词
分子束外延/InAs/GaSb Ⅱ类超晶格/霍尔效应/X射线衍射Key words
molecular beam epitaxy/InAs/GaSb type-Ⅱ superlattice/Hall effect/X-ray diffraction分类
数理科学引用本文复制引用
向泰毅,王楠,黄敏,柴旭良,陈建新..InAs/GaSb Ⅱ类超晶格电学特性的研究[J].红外与毫米波学报,2026,45(2):243-249,7.基金项目
国家自然科学基金青年科学基金项目(62104236) Supported by the Young Scientists Fund of the National Natural Science Foundation of China(62104236) （62104236）
