计算机工程与科学2026，Vol.48Issue(5)：770-778,9.DOI:10.3969/j.issn.1007-130X.2026.05.002
基于28 nm CMOS工艺采用亚阈值区MOSFET的低温漂系数高电源抑制电流模带隙基准
A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS
摘要
Abstract
As the size of core devices in integrated circuits shrinks,large-scale process gradually fails to meet the performance requirements of circuits under advanced technologies.As a fundamental unit in analog circuits,the bandgap voltage reference needs to adapt to process variations.This paper,utilizing a 28 nm CMOS process,proposes a current-mode bandgap voltage reference with excellent power supply rejection ratio(PSRR)over a wide bandwidth range and a low temperature coefficient.Unlike conven-tional circuits that employ bipolar transistors to generate positive and negative temperature coefficient voltages,this bandgap voltage reference generates a reference voltage by leveraging the temperature characteristics of MOSFET voltages in the subthreshold region.Subthreshold devices have a low turn-on voltage,significantly reducing the common-mode voltage of the amplifier,increasing the vertical voltage margin.By incorporating a current mirror structure to generate a secondary power supply and using a common-gate transistor to increase output resistance,the PSRR over a high bandwidth range is en-hanced.Based on a current-mode bandgap reference,this voltage reference circuit operates with a 1.8 V power supply.Under the tt process corner,it provides a stable reference voltage of 943 mV within the temperature range of-40～125℃,with a temperature coefficient of the reference voltage of 6.1 ppm/℃.Within an input voltage range of 1.5～5 V,the line regulation is 0.33%.The PSRR is-64.3 dB at DC and remains below-64.1 dB within the frequency range of 0～16 kHz,still reaching-58 dB at 100 kHz.The layout area is 0.003 8 mm2,and the quiescent power consumption during operation is 16.56 μW.关键词
电压基准/亚阈值区/高电源抑制比/电流模式/温度系数Key words
voltage reference/subthreshold/high power supply rejection ratio(PSRR)/current mode/temperature coefficient分类
信息技术与安全科学引用本文复制引用
赵成卓,庞征斌,吕方旭,徐炜遐,黄恒,罗章,辛可为,王文晨,李萌,赖明澈..基于28 nm CMOS工艺采用亚阈值区MOSFET的低温漂系数高电源抑制电流模带隙基准[J].计算机工程与科学,2026,48(5):770-778,9.基金项目
国家重点研发计划(2022YFB2803101) （2022YFB2803101）
