太赫兹科学与电子信息学报2026，Vol.24Issue(5)：574-579,6.DOI:10.11805/TKYDA2024606
面向截止频率提升的GaAs SBD器件仿真设计
Simulation and design of GaAs SBD targeting cutoff frequency enhancement
摘要
Abstract
To quantitatively enhance the dynamic cutoff frequency(fcd)of GaAs Schottky Barrier Diode(SBD)devices,we systematically investigate the effects of doping concentration and active layer thickness on fcd,and analyze the capacitance,resistance,and fcd characteristics of devices under various N-GaAs doping concentrations and layer thicknesses.The results demonstrate that both doping concentration(with fixed active layer thickness)and active layer thickness(with fixed doping concentration)induce an initial increase followed by a decrease in fcd,a behavior primarily governed by the capacitance modulation ratio(Cratio).Through quantitative discussion of fcd,this study reveals the critical influence of Cratio on fcd beyond the two conventional factors of series resistance and junction capacitance,and provides four sets of optimal structural parameter designs for achieving high fcd,offering theoretical foundation and guidance for subsequent device design.关键词
肖特基二极管/动态截止频率/N-GaAs掺杂浓度/N-GaAs层厚度/串联电阻/结电容Key words
Schottky Diode/dynamic cutoff frequency/N-GaAs doping concentration/N-GaAs layer thickness/series resistance/junction capacitance分类
信息技术与安全科学引用本文复制引用
林耕鑫,陈麒宇,康凌风,邓泽佳,陈健中,曾建平..面向截止频率提升的GaAs SBD器件仿真设计[J].太赫兹科学与电子信息学报,2026,24(5):574-579,6.基金项目
国家自然科学基金资助项目(62074139) （62074139）
中国工程物理研究院院长基金资助项目(YZJJZQ2023014) （YZJJZQ2023014）
