太赫兹科学与电子信息学报2026，Vol.24Issue(5)：603-610,8.DOI:10.11805/TKYDA2025026
基于High-K电介质的低高频优值4H-SiC MOSFET设计
A low High-Frequency Figure Of Merit 4H-SiC MOSFET based on High-K dielectric
摘要
Abstract
One of the research hotspots for Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors(SiC MOSFETs)is how to reduce the High-Frequency Figure of Merit(HF-FOM).This paper presents a theoretical derivation combined with Technology Computer Aided Design(TCAD)simulation technology to analyze the influence of field plate isolation dielectric materials on device performance.Based on this analysis,we propose a Split-Gate MOSFET(SG MOSFET)structure named HK(High-K)-MOSFET that connects the source field plate with a High-K field plate isolation dielectric.Compared to the HK MOSFET(SiO2)using silicon oxide as the field plate dielectric and the conventional Split Gate structure(SG MOSFET),the gate-drain capacitance(CGD)of the HK-MOSFET(HfO2)using hafnium oxide as the dielectric is reduced by 34.0%and 71.7%,respectively,while the gate-drain charge(QGD)is reduced by 24.5%and 58.9%,respectively.The(HF-FOM)1(CGD×Ronsp)and(HF-FOM)2(QGD×Ronsp)decrease by 71.4%and 60.1%compared to those of the SG-MOSFET.The results indicate that utilizing High-K dielectrics is an effective approach for designing fast switching SiC MOSFET devices.关键词
High-K电介质/栅漏电荷/栅漏电容/高频优值Key words
High-K dielectric/gate-drain charge(QGD)/gate-drain capacitance(CGD)/High-Frequency Figure of Merit(HF-FOM)分类
信息技术与安全科学引用本文复制引用
陈家兴,李俊焘,张林..基于High-K电介质的低高频优值4H-SiC MOSFET设计[J].太赫兹科学与电子信息学报,2026,24(5):603-610,8.基金项目
中国工程物理研究院院长基金资助项目(YZJJZQ2023015) （YZJJZQ2023015）
