国家科学评论（英文版）2026，Vol.13Issue(8)：8-9,2.DOI:10.1093/nsr/nwag137
Surprises from a boron-rich semiconductor under pressure
Surprises from a boron-rich semiconductor under pressure
Artem R.Oganov1
作者信息
- 1. Skolkovo Institute of Science and Technology,Russia
- 折叠
引用本文复制引用
Artem R.Oganov..Surprises from a boron-rich semiconductor under pressure[J].国家科学评论（英文版）,2026,13(8):8-9,2.
