河南科技大学学报（自然科学版）2026，Vol.47Issue(3)：37-45,53,10.DOI:10.15926/j.cnki.issn1672-6871.2026.03.004
双层ZnO量子点界面势垒调控的忆阻器及其突触可塑性
Memristor with Interfacial Barrier Modulation by Bilayer ZnO Quantum Dots and Its Synaptic Plasticity
摘要
Abstract
To address the unreliable switching behavior in conventional memristors caused by the random formation of conductive filaments,a bilayer ZnO quantum dot(QD)interfacial memristor with a minimalist symmetric structure was proposed and fabricated.The device employs a dual-QD interface as the core modulation unit,where a tunable interfacial barrier was constructed.By utilizing localized electric field enhancement and electron trapping effects,the orbital-oriented migration of oxygen vacancies was guided,enabling stable and predictable resistive switching.The results show that the memristor exhibits an ON/OFF ratio of approximately 103,endurance exceeding 107 cycles,data retention longer than 106 s,and controllable multilevel conductance.Moreover,key synaptic functions,such as spike-timing-dependent plasticity,were successfully emulated.Further analysis reveals that the bilayer QD interface engineering enables controllable modulation of defect dynamics and barrier evolution within a simplified material system.The interfacial potential relaxation is characterized by a time constant τ of approximately 7.97×103 s and a relaxation exponent β of about 0.7.关键词
忆阻器/量子点界面/界面工程/氧空位迁移/突触可塑性/神经形态计算Key words
memristor/quantum dot interface/interface engineering/oxygen vacancy migration/synaptic plasticity/neuromorphic computing分类
通用工业技术引用本文复制引用
姜智文,于秋红,李小红..双层ZnO量子点界面势垒调控的忆阻器及其突触可塑性[J].河南科技大学学报（自然科学版）,2026,47(3):37-45,53,10.基金项目
国家自然科学基金项目(52302173) （52302173）
中国博士后科学基金项目(2024T170237) （2024T170237）
