强激光与粒子束2026，Vol.38Issue(6)：26-37,12.DOI:10.11884/HPLPB202638.260021
酸性条件下YAG晶体化学机械抛光去除机理研究
Investigation of the material removal mechanism in chemical mechanical polishing of YAG crystals using acidic polishing slurry
摘要
Abstract
[Background]Yttrium aluminum garnet(YAG)crystals,used as gain media in high-power laser devices,require stringent surface quality.However,their high hardness and low fracture toughness make it difficult for conventional polishing methods to simultaneously achieve a high material removal rate(MRR)and ultra-low surface roughness(Sa),which limits their application in advanced laser systems.[Purpose]This study aims to investigate the process optimization and underlying mechanisms of acidic chemical mechanical polishing(CMP)for YAG crystals.[Methods]An orthogonal experimental design was employed to systematically evaluate the main effects and interactions of pressure,rotational speed,and slurry concentration on polishing responses.[Results]The results revealed that MRR is predominantly controlled by pressure,while Sa is primarily determined by slurry concentration.Based on this finding,a"decoupling matching criterion for removal-quality dual-response parameters"was proposed,leading to the identification of an optimal synergistic process window(A3B2C2:110 kPa,4 r/min,volume fraction 10％).This optimized process achieved an MRR of 30 nm/min,an Sa as low as 0.14 nm,a PV value of 0.04λ,and a defect-free surface.The MRR represents an 11％improvement over existing SiO2 abrasive processes,and the Sa value is below the application threshold for Nd:YAG(≤0.2 nm).Mechanistic studies indicated that in an acidic CMP environment,H+preferentially attacks Al-O-Al bonds,inducing surface reconstruction and lattice distortion.The broadening of XRD peaks and the positive shift of the Al 2p binding energy in XPS(from 73.46 eV to 75.23 eV)confirmed surface amorphization and the formation of a hydrated Al-OH layer.[Conclusions]These findings establish a four-step removal mechanism:proton-mediated action,selective bond cleavage,interfacial bonding,and softened layer stripping.Furthermore,a theoretical framework termed"Chemical-Mechanical Temporal Matching"(CM-TM)is proposed for the first time,elevating CMP surface quality control from parameter optimization to the synergistic regulation of reaction kinetics and mechanical removal.This study provides a systematic process guideline and mechanistic explanation for atomic-scale,damage-free polishing of YAG and similar hard and brittle optical materials,offering both theoretical value and engineering guidance.关键词
YAG单晶/化学机械抛光/表面粗糙度/酸性抛光液/材料去除率Key words
YAG single crystal/chemical mechanical polishing/surface roughness/acidic polishing slurry/material removal rate分类
化学化工引用本文复制引用
胡江川,黄颖,赵方,孙锐,刘杰,杨佳,卢忠文,迭俊珲,黄金勇..酸性条件下YAG晶体化学机械抛光去除机理研究[J].强激光与粒子束,2026,38(6):26-37,12.基金项目
国家自然科学基金项目(12404445) （12404445）
