国防科技大学学报2026，Vol.48Issue(3)：162-181,20.DOI:10.11887/j.issn.1001-2486.26010051
二维半导体晶体管与集成电路研究进展
Progress of two-dimensional semiconductor transistors and integrated circuits
摘要
Abstract
Two-dimensional semiconductors are identified by the international roadmap for devices and systems as key candidate materials for future sub-nm nodes,owing to their atomic-scale thickness,smooth surface without dangling bonds and capability to suppress short-channel effects.Focusing on the current status of the full-chain development of two-dimensional semiconductors from basic materials science to system-level integration,the intrinsic physical advantages over traditional silicon-based materials and the progress in preparation processes were systematically analyzed.The latest progress and technical bottlenecks of core process modules including contact resistance engineering,gate dielectric integration and device architecture evolution of two-dimensional semiconductor transistors were reviewed in detail.Meanwhile,the development trajectory from early single-transistor verification to large-scale integrated circuits was traced comprehensively,and the collaborative challenges among materials,processes and design during the integration process were analyzed.The unique potential of two-dimensional semiconductors in emerging paradigms such as in-memory sensing and computing,neuromorphic computing and van der Waals heterogeneous integration is further discussed.关键词
二维半导体/化学气相沉积/晶体管/集成电路/范德华异质集成/感存算一体Key words
two-dimensional semiconductors/chemical vapor deposition/transistors/integrated circuits/van der Waals heterogeneous integration/in-memory sensing and computing分类
信息技术与安全科学引用本文复制引用
丁荣祥,文澜,张宇凯,朱梦剑..二维半导体晶体管与集成电路研究进展[J].国防科技大学学报,2026,48(3):162-181,20.基金项目
国家自然科学基金面上基金资助项目(12174444) （12174444）
