电气传动2026，Vol.56Issue(6)：32-40,9.DOI:10.19457/j.1001-2095.dqcd26584
基于导通电阻测量的SiC MOSFET结温在线监测方法
Online Monitoring Method for SiC MOSFET Junction Temperature Based on Turn-on Resistors Measurement
摘要
Abstract
Junction temperature is a key indicator of the health status of SiC MOSFET,and real-time monitoring of junction temperature is an important foundation for condition monitoring,health management and lifetime prediction.The real-time monitoring of junction temperature was investigated based on the on-resistance,a static thermal parameter of medium and high-voltage SiC MOSFETs.Firstly,the correlation between on-resistance and junction temperature was analysed.Secondly,the theoretical analysis,simulation and experimental verification of the working principle and parameter design of the online measurement circuit of turn-on voltage drop were carried out.Finally,the models of junction temperature,on-resistance and load current of SiC MOSFETs were calibrated offline based on the double-pulse experiment.A BUCK converter platform was built to verify the feasibility and applicability of the proposed junction temperature online measurement scheme under two different working conditions.关键词
导通压降/碳化硅功率器件/结温监测/热敏电参量Key words
turn-on voltage drop/SiC MOSFET/junction temperature monitoring/temperature sensitive electrical parameters(TSEP)分类
信息技术与安全科学引用本文复制引用
田家辉,齐晓光,赵凯林,徐田丰,陈月清,李林璟..基于导通电阻测量的SiC MOSFET结温在线监测方法[J].电气传动,2026,56(6):32-40,9.基金项目
国网河北省电力有限公司科技项目(SGHEJY00GHJS2310075) （SGHEJY00GHJS2310075）
