人工晶体学报2026，Vol.55Issue(5)：697-705,9.DOI:10.16553/j.cnki.issn1000-985x.2025.0264
氧分压对光学浮区法生长β-Ga2O3单晶的影响
Effect of Oxygen Partial Pressure on β-Ga2O3 Single Crystals Grown by Optical Floating Zone Method
摘要
Abstract
Gallium oxide(Ga2O3)is a representative fourth-generation semiconductor with unique physical properties and the advantage of readily available large-area single crystals.These characteristics make Ga2O3 highly attractive for deep-ultraviolet photodetection and high-efficiency power electronic applications.Oxygen vacancies are among the most common intrinsic point defects in oxide semiconductors and play a crucial role in determining the material quality and device performance of Ga2O3.Therefore,effective control of oxygen vacancies in Ga2O3 single crystals is of significant practical importance.In this work,β-Ga2O3 single crystals were grown by optical floating zone method,which enables crucible-free growth and high material purity.A precisely controlled Ar/O2 mixed atmosphere was employed to systematically investigate the effect of oxygen partial pressure on oxygen vacancy defect concentration in β-Ga2O3 single crystals.With increasing oxygen content in the growth atmosphere,the optical transmittance of β-Ga2O3 single crystals is markedly enhanced,and the lattice ordering is significantly improved.Meanwhile,the defect-related photoluminescence emission is strongly suppressed.X-ray photoelectron spectroscopy analyses of the O 1s anion and Ga 3d cation states consistently demonstrate that the oxygen vancancy defect concentration decreases with increasing oxygen partial pressure.These results indicate that oxygen partial pressure is an effective parameter for regulating oxygen vacancy defect concentration in β-Ga2O3 single crystals.This study provides practical guidance for the growth of high-quality oxide semiconductor single crystals.关键词
氧化镓/光学浮区法/氧空位/氧分压/单晶/X射线光电子能谱Key words
gallium oxide/optical floating zone method/oxygen vacancy/oxygen partial pressure/single crystal/X-ray photoelectron spectroscopy分类
数理科学引用本文复制引用
李新朋,李山,冯淦荣,祁颂,季学强,唐为华,夏长泰..氧分压对光学浮区法生长β-Ga2O3单晶的影响[J].人工晶体学报,2026,55(5):697-705,9.基金项目
江苏省前沿技术研发计划(BF2025078) （BF2025078）
国家自然科学基金青年科学基金项目(62305171) （62305171）
江苏省自然科学基金青年基金(BK20230361) （BK20230361）
