人工晶体学报2026，Vol.55Issue(5)：772-781,10.DOI:10.16553/j.cnki.issn1000-985x.2026.0007
新型复合终端结构横向β-Ga2O3场效应晶体管电学特性仿真研究
Simulation Study on Electrical Characteristics of New Composite Terminal Structure Lateral β-Ga2O3 Field-Effect Transistors
摘要
Abstract
Gallium oxide(β-Ga2O3)power devices have emerged as a prominent research focus owing to their advantages of high voltage resistance,low loss,and low cost-effectiveness.However,the development of β-Ga2O3 based homojunction devices remains impeded by the persistent challenge of achieving reliable and controllable P-type doping.Meanwhile,the heterojunction termination devices still have problems that the electrical characteristics such as high on-resistance and low breakdown voltage,which fail to meet the requirements of practical applications.To address the aforementioned issues,this paper innovatively proposed a composite terminal enhanced lateral NiO/β-Ga2O3 heterojunction field effect transistor(HJFET)consisting of a field-limiting ring and a floating field plate made of NiO.The effects of the length of the floating field plate and the length and thickness of the field-limiting ring on the breakdown characteristics of the device were studied in detail using the TCAD software.The results show that the combination of the field-limiting ring and the floating field plate can effectively alleviate the edge electric field concentration effect at the gate,and the high dielectric constant dielectric HfO2 can regulate the edge electric field of the heterojunction to be within the channel of β-Ga2O3.Eventually,the device achieves a high breakdown voltage of 2 537 V.For the device with the floating field plate,a low on-resistance of 14.21 mΩ·cm2,a breakdown voltage of 2 358 V,and a PFOM of 391.285 MW·cm-2 are obtained.The design of this study provides a new idea for the design and optimization of high-power and high-voltage gallium oxide power devices.关键词
β-Ga2O3功率器件/增强型异质结场效应晶体管/HfO2/p-NiO/场限环/浮空场板/边缘电场集中Key words
β-Ga2O3 power device/enhanced HJFET/HfO2/p-NiO/field-limiting ring/floating field plate/edge electric field concentration分类
数理科学引用本文复制引用
李子唯,余建刚,刘晋花,李腾腾,杨晓利,雷程,梁庭..新型复合终端结构横向β-Ga2O3场效应晶体管电学特性仿真研究[J].人工晶体学报,2026,55(5):772-781,10.基金项目
山西省重点研发计划(202302030201001) （202302030201001）
山西省科技重大专项"揭榜挂帅"项目(202301030201003) （202301030201003）
中国博士后科学基金(2024MD754039) （2024MD754039）
仪器科学与动态测试教育部重点实验室开放基金资助(JYBSYSKFJJ319008) （JYBSYSKFJJ319008）
