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Direct growth of high-quality GaN on single-crystal AlN substrate and related thermal characterization

Yinghao Chen Hongcai Li Genhao Liang Zhengguang Fang Jun Zhang Kai Wang Jiayu Dai Xiaoxiang Yu Lishan Zhao

半导体学报（英文版）2026，Vol.47Issue(6)：119-127,9.

半导体学报（英文版）2026，Vol.47Issue(6)：119-127,9.DOI:10.1088/1674-4926/25120047

Direct growth of high-quality GaN on single-crystal AlN substrate and related thermal characterization

Yinghao Chen ¹Hongcai Li ²Genhao Liang ¹Zhengguang Fang ¹Jun Zhang ¹Kai Wang ³Jiayu Dai ²Xiaoxiang Yu ²Lishan Zhao¹

作者信息

1. College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China
2. College of Science,National University of Defense Technology,Changsha 410073,China
3. Hunan Institute of Advanced Technology,Changsha 410205,China
折叠

摘要

关键词

single-crystal AlN substrate/GaN/AlN heterostructure/broadband frequency domain thermoreflectance/thermal properties

Key words

single-crystal AlN substrate/GaN/AlN heterostructure/broadband frequency domain thermoreflectance/thermal properties

引用本文复制引用

Yinghao Chen,Hongcai Li,Genhao Liang,Zhengguang Fang,Jun Zhang,Kai Wang,Jiayu Dai,Xiaoxiang Yu,Lishan Zhao..Direct growth of high-quality GaN on single-crystal AlN substrate and related thermal characterization[J].半导体学报（英文版）,2026,47(6):119-127,9.

基金项目

This work is supported by the Innovation Research Founda-tion of National University of Defense Technology,P.R.China,with the Grant No.24-ZZCX-ZXGC-01. （）

半导体学报（英文版）

ISSN：1674-4926

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