首页|期刊导航|半导体学报（英文版）|Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes
半导体学报（英文版）2026，Vol.47Issue(6)：135-139,5.DOI:10.1088/1674-4926/26010036
Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes
Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes
摘要
关键词
δ-doping/cavity mode/micropillar/InAs/GaAs quantum dotsKey words
δ-doping/cavity mode/micropillar/InAs/GaAs quantum dots引用本文复制引用
Qiaozhi Zhang,Yingqiang Xu,Haiqiao Ni,Zhichuan Niu,Hanqing Liu,Sihao Su,Xiangjun Shang,Xiangbin Su,Donghai Wu,Chengao Yang,Dongwei Jiang,Yu Zhang..Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes[J].半导体学报（英文版）,2026,47(6):135-139,5.基金项目
This research work was funded by the National Natural Sci-ence Foundation of China(Grant Nos.62035017,12494600,12494601,12494602),the Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-112),the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0300801),the Key Research and Development Projects of Shanxi Province(Grant Nos.202102030201004,202201030201009),the Sci-ence and Technology Program of Guangzhou(Grant No.202103030001),the Postdoctoral Fellowship Program(GradeB)of China Postdoctoral Science Foundation(Grant No.GZB20240719). （Grant Nos.62035017,12494600,12494601,12494602）
