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Scrutinizing the important roles of hole transport layers in near-intrinsic Sb2S3 planar solar cells

Qiang Xie Jiacheng Zhou Wenfei Wei Naiqiang Yin Ru Zhou

半导体学报（英文版）2026，Vol.47Issue(6)：140-148,封3,10.

半导体学报（英文版）2026，Vol.47Issue(6)：140-148,封3,10.DOI:10.1088/1674-4926/25120025

Scrutinizing the important roles of hole transport layers in near-intrinsic Sb2S3 planar solar cells

Qiang Xie ¹Jiacheng Zhou ¹Wenfei Wei ²Naiqiang Yin ³Ru Zhou¹

作者信息

1. School of Electrical Engineering and Automation,Hefei University of Technology,Hefei 230009,China
2. School of Physics,Hefei University of Technology,Hefei 230009,China
3. School of Physics and Electronic Engineering,Qilu Normal University,Jinan 250200,China
折叠

摘要

关键词

Sb2S3 solar cells/hole transport layer/SCAPS/charge transport/charge recombination

Key words

Sb2S3 solar cells/hole transport layer/SCAPS/charge transport/charge recombination

引用本文复制引用

Qiang Xie,Jiacheng Zhou,Wenfei Wei,Naiqiang Yin,Ru Zhou..Scrutinizing the important roles of hole transport layers in near-intrinsic Sb2S3 planar solar cells[J].半导体学报（英文版）,2026,47(6):140-148,封3,10.

基金项目

The financial support by the National Natural Science Foundation of China(no.52371219)and the Fundamen-tal Research Funds for the Central Universities(no.JZ2024HGTG0295)is greatly acknowledged. （no.52371219）

半导体学报（英文版）

ISSN：1674-4926

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