电瓷避雷器Issue(3)：18-25,34,9.DOI:10.16188/j.isa.1003-8337.2026.03.003
烧结降温速率对ZnO压敏陶瓷电性能的影响
The Effect of The Cooling Rate During the Sintering Process on the Electrical Properties of ZnO Varistors
摘要
Abstract
Zinc oxide(ZnO)varistor ceramics are the core components of metal oxide surge arresters.The performance parameters of ZnO resistor chips,such as residual voltage ratio,potential gradient,and leakage current,are directly related to the protective,reliable,and lightweight characteristics of the ar-rester.By controlling the cooling rate of ZnO resistor chips during sintering process within the tempera-ture range of 900℃ to 400℃,the coordinated optimization of residual voltage ratio,potential gradient,and leakage current was achieved.Through broad-band dielectric spectroscopy,it was found that the intrinsic point defect concentration increases with the increase in cooling rate,and the increase in zinc in-terstitial defect concentration is more significant compared to the increase in oxygen vacancy defect con-centration.By decoupling the influencing factors of residual voltage ratio and potential gradient,it was found that the change in residual voltage ratio of ZnO resistor chips is mainly affected by the cooling rate,while the change in potential gradient is mainly affected by the highest sintering temperature.This study provides new insights and sufficient experimental evidence for the synergistic optimization of the small current performance and the high current impact performance of ZnO resistor chips.关键词
ZnO压敏陶瓷/降温速率/缺陷结构/介电温谱/电性能Key words
ZnO/cooling rate/defect structure/dielectric spectroscopy/electric property引用本文复制引用
厍海波,李盛涛,赵倡皓,刘扬帆,王宁,刘亚芸,伍建新,田冰,艾三,郭齐睿..烧结降温速率对ZnO压敏陶瓷电性能的影响[J].电瓷避雷器,2026,(3):18-25,34,9.基金项目
国家自然科学基金资助项目(编号:52307030).Project supported by National Natural Science Foundation of China(No.52307030). （编号:52307030）
