集成电路与嵌入式系统2026，Vol.26Issue(7)：36-46,11.DOI:10.20193/j.ices2097-4191.2025.0156
集成温度与功率检测的砷化镓超宽带功率放大器设计
Design of a GaAs ultra-wideband power amplifier with integrated temperature and power sensing
摘要
Abstract
This work presents the design and implementation of a distributed gallium arsenide power amplifier with integrated tempera-ture and power sensing for high-power ultra-wideband applications,based on a 0.15 μm-GaAs pHEMT process.The proposed amplifier consists of a distributed power amplifier,a temperature sensing unit,and a differential power detection unit.The distributed power am-plifier adopts a cascode architecture,which significantly enhances the output power.The proposed temperature sensing unit employs a multi-point array-based temperature measurement scheme,in which different temperature sensing nodes can be selected through an ex-ternal encoder.The differential power detection unit outputs detection voltages through the Vdet and Vref pins,effectively suppressing the influence of temperature variations on power detection accuracy.Simulation results indicate that,under the operating condition of Vgs=-0.3 V,the DPA achieves an operating bandwidth from DC to 28 GHz,with the output power increased to 30 dBm,a power-added efficiency of 15%,and a gain flatness better than±1 dB.Small-signal simulation results demonstrate that,over the operating bandwidth,both the input return loss and output return loss are better than-10 dB.The overall chip layout area is 3.8 mm×1.5 mm.关键词
超宽带/分布式功率放大器/砷化镓/温度检测/功率检测Key words
ultra-wideband/distributed power amplifier/GaAs/temperature sensing/power sensing分类
信息技术与安全科学引用本文复制引用
张舜尧,武一,杨帆,左玉多,王伟,郭艳菊,王浩轩,宋继元..集成温度与功率检测的砷化镓超宽带功率放大器设计[J].集成电路与嵌入式系统,2026,26(7):36-46,11.基金项目
国家自然科学基金联合基金—面向低压断路器的智能控制器服役效能退化机理与剩余寿命预测(U24A20152) （U24A20152）
