发光学报2026，Vol.47Issue(6)：970-982,13.DOI:10.37188/CJL.20260088
Co掺杂MAPbI3中FA的应力释放与费米能级调控及其在高效无传输层光电探测器中的应用
FA Doping for Strain Relaxation and Fermi Energy Management in B-site Co-doped MAPbI3 Toward Efficient Transport Layer-free Photodetectors
摘要
Abstract
B-site metal doping has potentials to suppress both the point defects and boundary defects of lead halide perovskites,while the differences in ionic radii of dopants and parent atoms induce remarkable local strains that se-verely limit the sizes of crystalline grains in thin films.Herein,FA has been introduced into Co-doped MAPbI3 to re-lax the local strains to improve the qualities of MAPbI3 thin films.Experimental and theoretical studies suggest that Co doping induced remarkable local tensile strains,which are effectively relaxed by doping FA.Further studies sug-gest that doping of FA decreases the boundary defects and tunes the Fermi energy of Co-doped MAPbI3 thin films si-multaneously,which effectively suppresses non-radiative recombination and improves the carrier transport at MAPbI3/ITO interfaces.On these bases,efficient transport layer-free MAPbI3/ITO photodetectors with the responsivity and external quantum efficiency(EQE)as high as 0.094 A/W and 28％at zero bias have been achieved.These results have provided promising pathways for obtaining efficient transport-layer-free perovskite photodetectors in the future.关键词
Co掺杂/Co-FA共掺杂/应变弛豫/高效光电探测/MAPbI3/ITOKey words
Co doped/Co-FA codoping/strain relaxation/efficient photodetection/MAPbI3/ITO分类
信息技术与安全科学引用本文复制引用
陈明明,刘康媛,张慧敏,刘圆,吴春霞,曹大威..Co掺杂MAPbI3中FA的应力释放与费米能级调控及其在高效无传输层光电探测器中的应用[J].发光学报,2026,47(6):970-982,13.基金项目
镇江市科技计划面上项目(JC2025003) （JC2025003）
江苏大学学生科研项目(24A249)Supported by the National Natural Science Foundation of Zhenjiang City(JC2025003) （24A249）
College Student Research Project of Jiangsu University(24A249) （24A249）
