现代应用物理2026,Vol.17Issue(3):137-143,7.DOI:10.12061/j.issn.2095-6223.202512004
SMIC 180 nm宽温区电荷灵敏前置放大器芯片研究
Study on Wide Temperature Range Charge-Sensitive Preamplifier Based on SMIC 180 nm Process
摘要
Abstract
Wide-bandgap detectors are characterized by high energy resolution,a wide operating temperature range,and strong radiation resistance.To leverage the advantages of wide-bandgap semiconductor detectors,a low-noise charge-sensitive preamplifier(CSA)suitable for a wide temperature range was designed.The design is based on the SMIC 180 nm process and consists of a core differential operational amplifier,a bandgap reference,and an output buffer.By optimizing the circuit structure of the operational amplifier and employing a fully symmetrical layout,a preamplifier with wide temperature range operation,low offset,and low noise is achieved.Post-simulation results indicate that the preamplifier can effectively detect sub-pC input charge signals within a rise time of 32 ns,with relative deviation of the amplification shall not exceed 1%.The circuit has an equivalent output impedance of 50 Ω,operates normally within the temperature range of-55 ℃ to 125 ℃,exhibits a sensitivity of 1.4 V·pC-1,and has a maximum single-particle charge detection capability of 0.4 pC and an equivalent noise charge of approximately 0.09 fC(600 e-).关键词
电荷灵敏前置放大器/低噪声/宽温区范围/核辐射探测/集成电路设计Key words
charge-sensitive preamplifier/low noise/wide operating temperature range/nuclear radiation detection/integrated circuit design分类
能源科技引用本文复制引用
乔洋,赵小龙,贺永宁,黄志永,齐文..SMIC 180 nm宽温区电荷灵敏前置放大器芯片研究[J].现代应用物理,2026,17(3):137-143,7.基金项目
国家自然科学基金资助项目(62271382) (62271382)