现代应用物理2026，Vol.17Issue(3)：160-166,7.DOI:10.12061/j.issn.2095-6223.202604016
纳秒级高精度自触发抗辐射加固电子开关的研制
Development of Nanosecond-Scale High-Precision Self-Triggered Radiation-Hardened Electronic Switch
摘要
Abstract
A nanosecond-scale high-precision self-triggered radiation-hardened electronic switch was developed for power-off protection of electronic systems in radiation enviroments.Based on the working principle,the topology of the switch circuit was designed,comprising a self-trigger circuit,a logic control circuit,and a power dirve circuit.Multi-layer slow-varying epitaxial process and SiO2+Si3N4 composite gate dielectric process were proposed to simultaneously achieve transient-dose-rate latchup hardening and total ionizing dose hardening.The radiation hardening performance of the electronic switch was comprehensively verified by irradiation tests using a pulsed γ-ray accelerator and cobalt-60 source.The irradiation results demonstrate that the electronic switch can normally self-trigger to power off and then restore power supply under a pulsed γ-ray irradiation.The power-off response time of the electronic switch is on the order of hundreds of nanoseconds,with stable and reliable power-off duration.The transient dose rate latchup hardening level reaches 5.4×109 Gy(Si)·s-1,and the total ionizing dose hardening level reaches 3 000 Gy(Si).关键词
电子开关/抗辐射加固/瞬时剂量率效应/总剂量效应Key words
electronic switch/radiation hardened/transient dose rate effects/total ionizing dose effects分类
能源科技引用本文复制引用
韩方,刘存生,李瑞宾,李俊霖,郭晓强,刘岩,杨继波,陈伟,王晨辉,郑东飞,赵洪超,刘俊威,刘奕泽,刘江,赵辉..纳秒级高精度自触发抗辐射加固电子开关的研制[J].现代应用物理,2026,17(3):160-166,7.基金项目
国家自然科学基金资助项目(11235008,11835006) （11235008,11835006）
