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Hafnium-Based Ferroelectric Post-Moore Electronics:Device Physics,Integration Architectures,and Neuromorphic System Implementation

Xiangwei Chen Zheng Wang Jialin Meng Tianyu Wang

Nano-Micro Letters2026，Vol.18Issue(9)：P.857-893,37.

Nano-Micro Letters2026，Vol.18Issue(9)：P.857-893,37.DOI:10.1007/s40820-026-02158-z

Hafnium-Based Ferroelectric Post-Moore Electronics:Device Physics,Integration Architectures,and Neuromorphic System Implementation

Xiangwei Chen ¹Zheng Wang ¹Jialin Meng ²Tianyu Wang³

作者信息

1. Shandong Key Laboratory of Next‑Generation Semiconductor Technology and Systems,School of Integrated Circuits,Shandong University,Jinan 250100,People’s Republic of China Shenzhen Research Institute of Shandong University,Shenzhen 518100,People’s Republic of China
2. Shandong Key Laboratory of Next‑Generation Semiconductor Technology and Systems,School of Integrated Circuits,Shandong University,Jinan 250100,People’s Republic of China Shenzhen Research Institute of Shandong University,Shenzhen 518100,People’s Republic of China National International Innovation Center,Shanghai 201203,People’s Republic of China Key Laboratory of Computational Neuroscience and Brain‑Inspired Intelligence(Fudan University),Ministry of Education,Shanghai 200433,People’s Republic of China
3. Shandong Key Laboratory of Next‑Generation Semiconductor Technology and Systems,School of Integrated Circuits,Shandong University,Jinan 250100,People’s Republic of China Shenzhen Research Institute of Shandong University,Shenzhen 518100,People’s Republic of China National International Innovation Center,Shanghai 201203,People’s Republic of China Key Laboratory of Computational Neuroscience and Brain‑Inspired Intelligence(Fudan University),Ministry of Education,Shanghai 200433,People’s Republic of China State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,People’s Republic of China
折叠

摘要

关键词

Hafnium oxide/Ferroelectric materials/Neuromorphic computing/Non-volatile memory

分类

信息技术与安全科学

引用本文复制引用

Xiangwei Chen,Zheng Wang,Jialin Meng,Tianyu Wang..Hafnium-Based Ferroelectric Post-Moore Electronics:Device Physics,Integration Architectures,and Neuromorphic System Implementation[J].Nano-Micro Letters,2026,18(9):P.857-893,37.

基金项目

supported by the NSFC(12474071) （12474071）

Natural Science Foundation of Shandong Province(ZR2025ZD10,ZR2025QB50,ZR2024YQ051) （ZR2025ZD10,ZR2025QB50,ZR2024YQ051）

Guangdong Basic and Applied Basic Research Foundation(2025A1515011191) （2025A1515011191）

the Shanghai Sailing Program(23YF1402200,23YF1402400) （23YF1402200,23YF1402400）

funded by Basic Research Program of Jiangsu(BK20250420,BK20240424) （BK20250420,BK20240424）

Open Research Fund of State Key Laboratory of Crystal Materials(KF2406) （KF2406）

Taishan Scholar Foundation of Shandong Province(tsqn202507058,tsqn202408006) （tsqn202507058,tsqn202408006）

Young Talent of Lifting engineering for Science and Technology in Shandong,China(SDAST2024QTB002) （SDAST2024QTB002）

the Qilu Young Scholar Program of Shandong University （）

Key Laboratory of Computational Neuroscience and Brain-Inspired Intelligence(Fudan University),Ministry of Education。（Fudan University）

Nano-Micro Letters

ISSN：2311-6706

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