首页|期刊导航|半导体学报（英文版）|Interface engineering for high-efficiency spin injection and polarized emission in GaN-based devices

Interface engineering for high-efficiency spin injection and polarized emission in GaN-based devices

Qihong Lai Yaping Wu Xu Li Zhiming Wu Junyong Kang Weilin Hu Mingyu Chen Hongshu Li Ying Ye Guimin Liao Jian Huang Xuanli Zheng Lijing Kong

半导体学报（英文版）2026，Vol.47Issue(7)：53-60,8.

半导体学报（英文版）2026，Vol.47Issue(7)：53-60,8.DOI:10.1088/1674-4926/25120016

Interface engineering for high-efficiency spin injection and polarized emission in GaN-based devices

Qihong Lai ¹Yaping Wu ¹Xu Li ¹Zhiming Wu ¹Junyong Kang ¹Weilin Hu ¹Mingyu Chen ¹Hongshu Li ¹Ying Ye ¹Guimin Liao ¹Jian Huang ¹Xuanli Zheng ¹Lijing Kong¹

作者信息

1. Department of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,China
折叠

摘要

关键词

spin injection/tunnel junction/graphene/Ⅲ-nitride semiconductors/spin light-emitting diodes

Key words

spin injection/tunnel junction/graphene/Ⅲ-nitride semiconductors/spin light-emitting diodes

引用本文复制引用

Qihong Lai,Yaping Wu,Xu Li,Zhiming Wu,Junyong Kang,Weilin Hu,Mingyu Chen,Hongshu Li,Ying Ye,Guimin Liao,Jian Huang,Xuanli Zheng,Lijing Kong..Interface engineering for high-efficiency spin injection and polarized emission in GaN-based devices[J].半导体学报（英文版）,2026,47(7):53-60,8.

基金项目

The work was funded by the National Natural Science Foundation of China (Nos.62374144,62574174,62274139,62304188,62574173,and 62374143),the Natural Science Foundation of Fujian Province (No.2025J011001),and the Basic Research Funds for Central Universities (No.20720250065). （Nos.62374144,62574174,62274139,62304188,62574173,and 62374143）

半导体学报（英文版）

ISSN：1674-4926

访问量0

下载量0

段落导航