光：科学与应用（英文版）2026，Vol.15Issue(6)：1814-1826,13.DOI:10.1038/s41377-026-02230-8
Over 1.65GW cm-2sr-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL
Over 1.65GW cm-2sr-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL
Zhicheng Zhang 1Xiao Li 1Chaofan Zhang 1Jun Wang 2Wenbo Zhan 3Yao Xiao 3Chen Luo 4Hao Zhou 4Wenfan Yang 3Yang Cheng 1Hao Yu 5Quanling Li3
作者信息
- 1. College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China
- 2. College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China||Suzhou Everbright Photonics Co.,Ltd,Suzhou 215163,China||College of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China
- 3. Suzhou Everbright Photonics Co.,Ltd,Suzhou 215163,China
- 4. College of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China
- 5. College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China||Suzhou Everbright Photonics Co.,Ltd,Suzhou 215163,China
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Zhicheng Zhang,Xiao Li,Chaofan Zhang,Jun Wang,Wenbo Zhan,Yao Xiao,Chen Luo,Hao Zhou,Wenfan Yang,Yang Cheng,Hao Yu,Quanling Li..Over 1.65GW cm-2sr-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL[J].光：科学与应用（英文版）,2026,15(6):1814-1826,13.
