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Advances in InX(X:As,Sb)Quantum Dots Infrared Photodetectors

Huiling TAI Wenxin ZENG Zaihua DUAN Yadong JIANG

光子传感器（英文版）2026，Vol.16Issue(2)：55-85,31.

光子传感器（英文版）2026，Vol.16Issue(2)：55-85,31.DOI:10.26599/PhoS.2026.9560015

Advances in InX(X:As,Sb)Quantum Dots Infrared Photodetectors

Huiling TAI ¹Wenxin ZENG ¹Zaihua DUAN ¹Yadong JIANG¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
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摘要

关键词

Quantum dots/InAs/InSb/infrared photodetector

Key words

Quantum dots/InAs/InSb/infrared photodetector

引用本文复制引用

Huiling TAI,Wenxin ZENG,Zaihua DUAN,Yadong JIANG..Advances in InX(X:As,Sb)Quantum Dots Infrared Photodetectors[J].光子传感器（英文版）,2026,16(2):55-85,31.

基金项目

This work is supported by the National Natural Science Fund for Distinguished Young Scholars(Grant No.62225106),National Natural Science Foundation of China(Grant No.U24A20229),and Sichuan Innovation Research Group Project(Grant No.2025NSFTD0008). （Grant No.62225106）

光子传感器（英文版）

ISSN：1674-9251

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