红外与毫米波学报2026，Vol.45Issue(3)：357-365,9.DOI:10.11972/j.issn.1001-9014.2026.03.002
基于侧栅AlGaN/GaN HEMT的共振探测太赫兹探测器
Terahertz detector based on side-gate AlGaN/GaN HEMT for resonant detection
摘要
Abstract
In high-electron-mobility transistor(HEMT)terahertz detectors,an excessively wide gate can generate oblique modes in the channel,resulting in weakened resonant detection signals and a broadened resonance peak.To address this issue,a side-gate HEMT(EdgeFET)structure was proposed.A resonant detection model for the side-gate device was established based on the hydrodynamic equations of the two-dimensional electron gas(2DEG)in conventional HEMT.A side-gate HEMT detector was fabricated,and terahertz resonant detection ex-periments were conducted at 77 K.The experimental results indicated that EdgeFET demonstrated distinct reso-nant responses at 77 K,with the resonant responsivity reaching 3.7 times the maximum non-resonant responsivi-ty.The experimental data were fitted using the theoretical model to validate its accuracy.These results strongly confirm the effectiveness of EdgeFET in enhancing the resonant performance of the detector,providing a new technological approach for the development of next-generation high-performance terahertz detectors.关键词
AlGaN/GaN HEMT/侧栅/太赫兹/共振探测Key words
AlGaN/GaN HEMT/side-gate/terahertz/resonant detection分类
信息技术与安全科学引用本文复制引用
靳晨阳,康亚茹,李叶然,颜伟,宁瑾,赵永梅,李兆峰,杨富华,王晓东..基于侧栅AlGaN/GaN HEMT的共振探测太赫兹探测器[J].红外与毫米波学报,2026,45(3):357-365,9.基金项目
Supported by the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43020502) （XDB43020502）
CAS Project for Young Scien-tists in Basic Research(YSBR-064). （YSBR-064）
