红外与毫米波学报2026，Vol.45Issue(3)：402-410,9.DOI:10.11972/j.issn.1001-9014.2026.03.007
基于MXenes/微构造硅异质结光电探调控特性研究
Study on regulation characteristics of photodetectors based on MX-enes/Microstructured silicon heterojunctions
摘要
Abstract
Surface-microstructured silicon exhibits unique optical properties,demonstrating promising potential for ap-plications in photoelectric sensors,solar cells,and related fields.To further explore the optoelectronic modulation ef-fects based on its surface architecture,this study presents a novel heterojunction photodetector constructed by integrat-ing MXenes(Ti3C2Tx)with microstructured silicon substrate through spin-coating and other fabrication techniques.Com-parative studies were conducted on commercial silicon,microstructured silicon,and Ti3C2Tx/microstructured silicon de-vices under varying wavelengths and optical power densities.The current-voltage(I-V)characteristics and photores-ponse performance reveal that the Ti3C2Tx/microstructured silicon photodetector exhibits significantly superior external quantum efficiency(EQE)and responsivity across a broad spectral range of 200-1750 nm compared to commercial sili-con and microstructured silicon detectors.Notably,in the near-infrared region(1100-1800 nm),the device demon-strates exceptional performance,achieving EQE exceeding 1000%and responsivity greater than 10 A/W.In contrast,commercial silicon photodetector in the same spectral range shows EQE below 10%and responsivity no higher than 0.3 A/W,while microstructured silicon photodetector exhibits EQE of below 15%and responsivity limited to 0.08 A/W.Further dynamic response and bias-dependent analyses indicate that the Ti3C2Tx coating,owing to its high conductivity and the built-in electric field formed at the heterojunction with microstructured silicon,significantly enhances detection capability from the NIR to MIR.Additionally,the response time is remarkably reduced from 38 ns to 20 ns.This het-erojunction holds great promise for high-speed photodetection in optical communications,LIDAR,photoelectric sens-ing,and other advanced optoelectronic applications.关键词
微构造硅/MXenes/光电探测器/异质结Key words
mictrostructured silicon/MXenes/photodetector/heterojunction分类
数理科学引用本文复制引用
廖鹭鹭,徐彩霞,刘高睿,林长青,李璐芳,孙海彬,杨星,许龙..基于MXenes/微构造硅异质结光电探调控特性研究[J].红外与毫米波学报,2026,45(3):402-410,9.基金项目
脉冲功率激光技术国家重点实验室开放课题(SKL2023KF40),重庆市自然科学基金(CSTB2023NSCQ-MSX0807,CSTB2024NSCQ-MSX0994),中央高校专项业务费(SWU-KU24004),浦江人才计划(No.23PJ1414800). Supported by the Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology(SKL2023KF40) （SKL2023KF40）
the Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0807,CSTB2024NSCQ-MSX0994) （CSTB2023NSCQ-MSX0807,CSTB2024NSCQ-MSX0994）
the Fundamental Research Funds for the Central Uni-versities(SWU-KU24004) （SWU-KU24004）
the Shanghai Pujiang Program(No.23PJ1414800) （No.23PJ1414800）
