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852nm波段半导体激光器研究进展

孙龙龙 唐吉龙 张聪 代千 宋海智 魏志鹏

光学精密工程2026,Vol.34Issue(15):2331-2358,28.
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光学精密工程2026,Vol.34Issue(15):2331-2358,28.DOI:10.37188/OPE.20263415.2331

852nm波段半导体激光器研究进展

Research advances in semiconductor lasers at 852 nm band

孙龙龙 1唐吉龙 1张聪 1代千 2宋海智 3魏志鹏1

作者信息

  • 1. 长春理工大学 半导体激光全国重点实验室,吉林 长春 130022
  • 2. 西南技术物理研究所,四川 成都 610041
  • 3. 长春理工大学 半导体激光全国重点实验室,吉林 长春 130022||西南技术物理研究所,四川 成都 610041
  • 折叠

摘要

Abstract

Semiconductor lasers emitting at 852 nm are essential light sources for cesium-based atomic sys-tems because their wavelength is resonant with the Cs D2 transition.They support cesium atomic clocks,quantum sensing,cold-atom manipulation,and precision spectroscopy.This review addresses the need for a systematic assessment of 852 nm laser technologies by summarizing recent advances in quantum-well material systems,device architectures,performance optimization,and engineering applications.The de-velopment of AlGaAs/GaAs,aluminum-free InGaAsP/GaAs,and InAlGaAs/GaAs active-region plat-forms is first reviewed.The effects of material design on carrier confinement,facet reliability,thermal sta-bility,and electro-optical conversion efficiency are analyzed.Major device configurations—including verti-cal-cavity surface-emitting lasers,distributed-feedback lasers,external-cavity diode lasers,vertical exter-nal-cavity surface-emitting lasers,and high-power edge-emitting lasers-are then evaluated according to their structural characteristics and performance metrics.Their relative capabilities in linewidth,output power,slope efficiency,single-mode stability,and system-level integration are compared.Commercial 852 nm semiconductor laser products are further assessed from an application-oriented perspective.Current do-mestic activities are concentrated primarily on product distribution,module packaging,and system integration,whereas core laser chips and gain chips remain largely dependent on overseas suppliers.Future development should prioritize narrower linewidths,higher output power,improved electro-optical efficiency,wider operat-ing-temperature ranges,enhanced reliability,and chip-scale integration.These advances are expected to sup-port next-generation cesium atomic clocks and quantum precision-measurement systems.

关键词

半导体激光器/量子阱结构/核心性能指标/铯原子钟

Key words

semiconductor lasers/quantum well structure/core performance metrics/cesium atomic clocks

分类

信息技术与安全科学

引用本文复制引用

孙龙龙,唐吉龙,张聪,代千,宋海智,魏志鹏..852nm波段半导体激光器研究进展[J].光学精密工程,2026,34(15):2331-2358,28.

基金项目

吉林省科技发展计划资助项目(No.SKL202602007JC) (No.SKL202602007JC)

中国兵器工业集团有限公司激光技术重点实验室开放基金资助项目(No.KLLDT202410) (No.KLLDT202410)

光学精密工程

1004-924X

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