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Naphthalimide-based nonionic sulfonate photoacid generators:structure-property relationship and sub-30 nm resolution lithography

Changchang Zhuang Jiao Chen Tao Wang Jun Zhao Haoyuan Li Hanshen Xin Jianhua Zhang

工业化学与材料（英文）2026，Vol.4Issue(4)：517-529,13.

工业化学与材料（英文）2026，Vol.4Issue(4)：517-529,13.DOI:10.1039/d5im00286a

Naphthalimide-based nonionic sulfonate photoacid generators:structure-property relationship and sub-30 nm resolution lithography

Changchang Zhuang ¹Jiao Chen ¹Tao Wang ¹Jun Zhao ²Haoyuan Li ¹Hanshen Xin ¹Jianhua Zhang¹

作者信息

1. School of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,China
2. Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai,China
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摘要

关键词

Nonionic photoacid generators/Naphthalimide-benzenesulfonate/Acid generation quantum yield/Structure-property relationship/Sub-30 nm lithography

Key words

Nonionic photoacid generators/Naphthalimide-benzenesulfonate/Acid generation quantum yield/Structure-property relationship/Sub-30 nm lithography

引用本文复制引用

Changchang Zhuang,Jiao Chen,Tao Wang,Jun Zhao,Haoyuan Li,Hanshen Xin,Jianhua Zhang..Naphthalimide-based nonionic sulfonate photoacid generators:structure-property relationship and sub-30 nm resolution lithography[J].工业化学与材料（英文）,2026,4(4):517-529,13.

基金项目

The authors thank the BL08U1B beamline of the Shanghai Synchrotron Radiation Facility for providing the EBL.The National Natural Science Foundation of China(grant numbers:22090013)and the Shanghai Committee of Science and Technology(grant number:YDZX20213100002672 and 21QA1402900)provided financial support for this study. （grant numbers:22090013）

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