机电工程技术2026，Vol.55Issue(15)：13-19,61,8.DOI:10.3969/j.issn.1009-9492.2025.00131
IGBT剩余寿命预测研究进展及其挑战
Research Progress and Challenges of Remaining Useful Life Prediction for IGBT
摘要
Abstract
As the core devices of power electronic systems,Insulated Gate Bipolar Transistor(IGBT)is regarded as a decisive component for the stable operation of the whole system,and their reliability is highly valued.The research status and future prospects of remaining useful life prediction for IGBT are summarized.The module structures,failure mechanisms and characteristic failure parameters of the IGBT are introduced.Relevant literatures on IGBT remaining useful life prediction driven by physical models and data are systematically sorted out.On this basis,a remaining useful life prediction method based on digital twin is put forward for the IGBT.The origin,basic concept,and technical connotation of the digital twin and its application value in predictive maintenance are elaborated in detail.The characteristics and applicable scenarios of the above method are analyzed,and an overall architecture of digital twin-based remaining useful life prediction for IGBT is established.Finally,the existing challenges and future development trends in this research field are prospected,including multi-physics coupling modeling,multi-source heterogeneous data fusion,standardized framework establishment,real-time performance optimization and uncertainty quantification.Theoretical references and technical supports are provided for digital twin-based health management of IGBT in this work.关键词
绝缘栅双极型晶体管(IGBT)/数字孪生/物理模型/数据驱动/剩余寿命预测Key words
insulated gate bipolar transistor(IGBT)/digital twin/physical model/data driven/remaining life prediction分类
信息技术与安全科学引用本文复制引用
王康,李廷,樊嘉慧,邱婧,王啸博..IGBT剩余寿命预测研究进展及其挑战[J].机电工程技术,2026,55(15):13-19,61,8.基金项目
嘉兴市科技局公益类项目(2025CGW108) （2025CGW108）
嘉兴市公益性研究计划项目(2024AD10040,2025CGZ027) （2024AD10040,2025CGZ027）
