上海航天（中英文）2026，Vol.43Issue(4)：52-60,9.DOI:10.19328/j.cnki.2096-8655.2026.04.006
高效5J薄膜GaAs太阳电池器件工艺技术
A High-effective Process for 5J Thin-film GaAs Solar Cell
施祥蕾 1孙利杰 1李欣益 1郭哲俊 1劭文龙 1雷仁博 1杨荞冰 2周丽华 1张占飞 1钱勇 1吴敏1
作者信息
- 1. 上海空间电源研究所,上海 200245||空间电源全国重点实验室,上海 200245
- 2. 上海空间电源研究所,上海 200245
- 折叠
摘要
Abstract
To meet the application requirements of high power to weight ratio and flexible for solar cells,in this paper,a high-effective process for 5J thin-film gallium arsenide(GaAs)solar cell is proposed.First,thermal annealing treatment is carried out to balance the stress in the double-mismatched 5J GaAs epitaxial layer,and a pyrolytic film is taken as the temporarily bonded film.Then,the processes of epitaxial layer lift-off and isolation groove etching are optimized.The obtained 5J thin-film GaAs solar cell has an open circuit voltage of 4.58 V,short circuit current of 12.02 mA/cm2,efficiency of 32.8%(AM0),and size of 2 cm×4 cm,with a weight-to-power ratio of 2 030 W/kg.The results can provide research basis for future wearable lightweight and efficient energy supply system for space/near space and ground.关键词
太阳电池/功率质量比/薄膜砷化镓(GaAs)/器件/柔性Key words
solar cell/power-to-weight ratio/thin-film gallium arsenide(GaAs)/device/flexibility分类
航空航天引用本文复制引用
施祥蕾,孙利杰,李欣益,郭哲俊,劭文龙,雷仁博,杨荞冰,周丽华,张占飞,钱勇,吴敏..高效5J薄膜GaAs太阳电池器件工艺技术[J].上海航天（中英文）,2026,43(4):52-60,9.
