同位素2026，Vol.39Issue(4)：331-339,9.DOI:10.7538/tws.2026.youxian.021
基于半导体工艺与器件(TCAD)仿真方法的DIS剂量计研究
Research on DIS Dosimeter Based on TCAD Simulation Method
徐佳琦 1王菲菲 1高飞 1丁雨阳 1陈嘉航 1谭新乐1
作者信息
- 1. 中国原子能科学研究院 计量与校准技术重点实验室,北京 102413
- 折叠
摘要
Abstract
Personal dose monitoring and environmental radiation monitoring are commonly conducted in places such as nuclear power plant reactor operations and nuclear medical facilities,often using thermoluminescent dosimeters(TLD).However,conventional devices like TLDs suffer from limitations in terms of real-time capability and readout convenience.To address the requirements of environmental and personal dose monitoring,this study carries out simulation research and experimental testing on a novel type of direct ion storage(DIS)dosimeter.A comprehensive simulation model is established through Monte Carlo simulations and technology computer-aided design(TCAD)for semiconductor process and device simulation.Combined with existing dosimeters,dosimetric characteristic tests are performed in radiation fields.As a result,a general simulation model for the DIS detector is developed,the overall structural parameters are designed,and a quantitative relationship between radiation dose and drain current is established.Based on the simulation results,compensation optimization of the existing dosimeter is performed using 1.6 mm PMMA or 1 mm aluminum,improving the energy response within the test range from±30%to within±20%.This study provides theoretical and technical support for further development of DIS dosimeters and serves as a reference for the research and application of novel DIS detectors.关键词
DIS剂量计/空腔电离室/场效应管/个人剂量当量/半导体工艺与器件仿真Key words
DIS dosimeter/cavity ionization chamber/field-effect transistor/personal dose equivalent/technology computer-aided design分类
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徐佳琦,王菲菲,高飞,丁雨阳,陈嘉航,谭新乐..基于半导体工艺与器件(TCAD)仿真方法的DIS剂量计研究[J].同位素,2026,39(4):331-339,9.
