半导体学报（英文版）2026，Vol.47Issue(8)：65-77,13.DOI:10.1088/1674-4926/26050023
Ion-migration memristive synaptic devices:mechanisms,device architectures,and integration strategies
Ion-migration memristive synaptic devices:mechanisms,device architectures,and integration strategies
Rui Dang 1Yuhan Bian 2Rongrong Bao 3Jing Rao 4Mengxiao Chen 3Caofeng Pan3
作者信息
- 1. School of Materials Science and Engineering,Beihang University,Beijing 100191,China
- 2. Department of Biomedical Engineering,Zhejiang University,Hangzhou 310027,China
- 3. Institute of Atomic Manufacturing,Beihang University,Beijing 100191,China
- 4. School of Instrumentation and Optoelectronic Engineering,Beihang University,Beijing 100191,China
- 折叠
摘要
关键词
ion migration/memristor/artificial synapse/neuromorphic computingKey words
ion migration/memristor/artificial synapse/neuromorphic computing引用本文复制引用
Rui Dang,Yuhan Bian,Rongrong Bao,Jing Rao,Mengxiao Chen,Caofeng Pan..Ion-migration memristive synaptic devices:mechanisms,device architectures,and integration strategies[J].半导体学报（英文版）,2026,47(8):65-77,13.
