集成技术2026，Vol.15Issue(5)：41-55,15.DOI:10.12146/j.issn.2095-3135.20260725001
高电子迁移率晶体管生物传感器研究进展
Research Progress on High Electron Mobility Transistor Biosensors
摘要
Abstract
High electron mobility transistor(HEMT)biosensors based on Ⅲ–Ⅴ semiconductor materials,leveraging the high mobility and near-surface charge sensitivity of the two-dimensional electron gas(2DEG)channel,offer unique advantages in charge transduction and signal amplification for label-free biodetection.However,insufficient long-term device stability and limited biointerface recognition reliability remain major obstacles to their practical applications.This review starts from HEMT device physics,summarizing gate structure engineering strategies for suppressing signal drift;then focuses on the rational design of sensing interfaces,discussing technological approaches to overcome Debye shielding and enhance charge coupling efficiency;and finally reviews recent progress in applying HEMT biosensors across clinical diagnostics,health monitoring,and environmental detection.Looking forward,with the deeper integration of rational interface design and device structural engineering,HEMT biosensors are expected to become a core technology platform for next-generation point-of-care testing(POCT)and home health monitoring.关键词
高电子迁移率晶体管/生物传感器/即时检测/德拜屏蔽/界面工程Key words
high electron mobility transistor/biosensor/point-of-care testing/Debye shielding/interfacial engineering分类
信息技术与安全科学引用本文复制引用
门冬,张先恩..高电子迁移率晶体管生物传感器研究进展[J].集成技术,2026,15(5):41-55,15.基金项目
新发突发与重大传染病防控国家科技重大专项项目(2026ZD01999700,2026ZD01999708) （2026ZD01999700,2026ZD01999708）
广州国家实验室专项项目(GZNL2024A01007) This work is supported by Prevention and Control of Emerging and Major Infectious Diseases-National Science and Technology Major Project(2026ZD01999700,2026ZD01999708),and Major Project of Guangzhou National Laboratory(GZNL2024A01007) （GZNL2024A01007）
