摘要
Abstract
Based on a 0.25 μm GaN High-Electron-Mobility Transistor(HEMT)process platform on SiC substrate,a compact,high-power,high-efficiency Microwave Monolithic Integrated Circuit(MMIC)Power Amplifier(PA)is designed using electro-thermal co-design and microwave device/circuit simulation techniques.Based on output power requirements and load-pull characteristics,the dimensions and optimum impedances of the transistors at each stage are determined.According to the circuit gain requirements,a three-stage cascaded configuration is adopted,with total gate width ratios of 1:3.6:16 for the pre-driver,driver,and final stages,respectively.Through electro-thermal co-design,the die layout is optimized to reduce thermal coupling effects and enhance the heat dissipation capability of the circuit.By employing electromagnetic parasitic parameter extraction technology,a compact circuit layout is achieved with a chip size of 2.7 mm×5.6 mm.Test results demonstrate that the power amplifier achieves a saturated output power greater than 46.5 dBm,a Power-Added Efficiency(PAE)greater than 42%,and a saturated power gain greater than 26.5 dB over the 14~18 GHz frequency band.Owing to its excellent electrical performance,it is suitable for wide applications in communications and electronic countermeasures.关键词
Ku波段/氮化镓/功率放大器/微波单片集成电路/紧凑型/大功率/高效率Key words
Ku band/GaN/Power Amplifier(PA)/Microwave Monolithic Integrated Circuit(MMIC)/compact/high power/high additional efficiency分类
信息技术与安全科学
