首页|期刊导航|Journal of Materiomics|HfO_(2)-based ferroelectrics for next-generation multi-level non-volatile memory:From fundamentals to prospects
Journal of Materiomics2026,Vol.12Issue(4):P.199-213,15.DOI:10.1016/j.jmat.2026.101233
HfO_(2)-based ferroelectrics for next-generation multi-level non-volatile memory:From fundamentals to prospects
摘要
关键词
Device-to-device variation/Endurance/HfO_(2)-Based ferroelectric thin film/Multi-level memory/Scalability分类
信息技术与安全科学引用本文复制引用
Binjian Zeng,Yahao Xue,Kejun Tan,Ji Zou,Shuaizhi Zheng,Yichun Zhou,Min Liao..HfO_(2)-based ferroelectrics for next-generation multi-level non-volatile memory:From fundamentals to prospects[J].Journal of Materiomics,2026,12(4):P.199-213,15.基金项目
rted by the Scientific Research Innovation Capability Support Project for Young Faculty(Grant No.ZYGXQNJSKYCXNLZCXM-M22) (Grant No.ZYGXQNJSKYCXNLZCXM-M22)
the National Natural Science Foundation of China(Grant Nos.12474092 and 12374093) (Grant Nos.12474092 and 12374093)
the National Key Research and Development Program of China(Grant No.2024YFA1208603) (Grant No.2024YFA1208603)
the Hunan Provincial Natural Science Foundation of China(2025JJ40002) (2025JJ40002)
the Scientific Research Fund of Hunan Provincial Education Department(24B0134). (24B0134)