首页|期刊导航|Journal of Materiomics|Low read/write voltage and high endurance of the ferroelectric memory with Hf_(0.5)Zr_(0.5)O_(2) film

Low read/write voltage and high endurance of the ferroelectric memory with Hf_(0.5)Zr_(0.5)O_(2) film

Hongdi Wu Guodong Zhang Junfeng Zheng Xubing Lu Jun-Ming Liu Guoliang Yuan

Journal of Materiomics2026，Vol.12Issue(3)：P.25-32,8.

Journal of Materiomics2026，Vol.12Issue(3)：P.25-32,8.DOI:10.1016/j.jmat.2026.101175

Low read/write voltage and high endurance of the ferroelectric memory with Hf_(0.5)Zr_(0.5)O_(2) film

Hongdi Wu ¹Guodong Zhang ¹Junfeng Zheng ²Xubing Lu ²Jun-Ming Liu ³Guoliang Yuan¹

作者信息

1. School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing,210094,China
2. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou,510006,China
3. Laboratory of Solid State Microstructures and School of Physics,Nanjing University,Nanjing,210093,China
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摘要

关键词

Ferroelectric memory/Hf_(0.5)Zr_(0.5)O_(2)film/Low read/write voltage/High endurance

分类

信息技术与安全科学

引用本文复制引用

Hongdi Wu,Guodong Zhang,Junfeng Zheng,Xubing Lu,Jun-Ming Liu,Guoliang Yuan..Low read/write voltage and high endurance of the ferroelectric memory with Hf_(0.5)Zr_(0.5)O_(2) film[J].Journal of Materiomics,2026,12(3):P.25-32,8.

基金项目

supported by National Key Research and Development Program of China(2024YFA1208602) （2024YFA1208602）

the National Natural Science Foundation of China(62374090,52250281,62174059,92163210 and 11974167) （62374090,52250281,62174059,92163210 and 11974167）

The experiments conducted on the read/write time of the memory cells were supported by Professor Anquan Jiang and Dr.Wendi Zhang at Fudan University. （）

Journal of Materiomics

ISSN：2352-8478

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