高压物理学报2026，Vol.40Issue(9)：87-104,18.DOI:10.11858/gywlxb.20261113
金刚石半导体材料的发展
Development of Diamond Semiconductor Materials
摘要
Abstract
Diamond has emerged as a quintessential representative of next-generation semiconductor materials,owing to its ultra-wide bandgap,exceptional thermal conductivity,high breakdown field strength,and outstanding carrier mobility.It has thus attracted extensive attention from fields such as power electronics,radio-frequency communications,and quantum information technologies.Intrinsic single-crystal diamond serves as the foundational substrate for diamond semiconductor development,requiring impurity concentrations at the parts per billion(ppb)level and extremely low dislocation densities.While the high-pressure high-temperature(HPHT)method yields material of higher purity and superior crystal quality,its utility is limited by small crystal dimensions.Consequently,HPHT-grown diamond is frequently employed as a substrate for chemical vapour deposition(CVD)homoepitaxy,enabling the preparation of large-area,high-quality single crystals.Regarding doping,the boron(B)atom,with a size difference of merely 6.5%compared to carbon(C),readily incorporates into the diamond lattice,facilitating the production of high-performance p-type diamond.Related devices,such as Schottky barrier diodes,have been successfully demonstrated.In contrast,n-type doping presents a fundamental challenge:potential dopants like phosphorus(P)and sulphur(S)possess atomic radii 35%-57%larger than carbon,making their incorporation and activation within the lattice exceedingly difficult.The ultra-high pressure and high-temperature diffusion method,which modulates this atomic size disparity under extreme pressures(e.g.,about 15 GPa),emerges as a promising new pathway towards achieving shallow-level n-type doping.Concerning surface terminations,hydrogen termination induces a high-mobility two-dimensional hole gas(2DHG),whilst oxygen termination enhances interface stability and provides chemical passivation.However,their thermal stability windows(approximately 400 and 600℃,respectively)remain inferior to those of substitutionally doped diamond,limiting their application in high-temperature and high-frequency devices.Therefore,breakthroughs in n-type doping,enhanced thermal stability of surface terminations,and the development of large-area,cost-effective fabrication processes are critical to advancing diamond semiconductor technology towards commercialisation in power electronics,quantum technologies,and high-performance sensing.This review aims to analyse and discuss these pivotal issues,exploring both the prospects and the persistent challenges facing diamond semiconductor development.关键词
金刚石半导体/化学气相沉积/高温高压/n型掺杂Key words
diamond semiconductors/chemical vapor deposition/high temperature and high pressure/n-type doping分类
信息技术与安全科学引用本文复制引用
董卫国,刘嘉琪,张钊斌,孔欣,崔西会,贺端威..金刚石半导体材料的发展[J].高压物理学报,2026,40(9):87-104,18.基金项目
四川省宽带微波电路高密度集成工程研究中心基金类指南项目(BMERC004-2024-09) （BMERC004-2024-09）
