金刚石与磨料磨具工程2026，Vol.46Issue(4)：556-568,13.DOI:10.13394/j.cnki.jgszz.2025.0039
蓝宝石晶片高效磁辅助抛光工艺参数研究
Research on process parameters of high-efficiency magnetically assisted polishing of sapphire wafers
摘要
Abstract
Objectives:Sapphire crystals have been widely used in the fields of semiconductors,optoelectronics,aerospace and other areas due to their excellent hardness,chemical stability and optical properties.However,the high hardness and brittleness of sapphire present many challenges for traditional polishing processes,such as low material removal rates,high surface roughness,and low processing efficiency.These issues restrict the further promotion of sapphire in high-precision applications.To address these technological bottlenecks,this study focuses on the efficient magnetic-assisted polishing technology of sapphire chips,aiming to significantly improve polishing efficiency and surface quality by optimizing process parameters.The main objective of this study is to explore the potential application of magnetic-assisted polishing technology in sapphire wafer processing.By optimizing process parameters such as magnetic pole arrangement,number of magnets,and rotation speed ratio,material removal rate can be improved,at the same time,reducing surface roughness.Methods:Research is based on a self-built vertical magnetic assisted polishing machine tool,which controls the magnetic particles through a magnetic field to form magnetic clusters with specific viscoelastic properties,thereby achieving efficient polishing of sapphire components.In the experiment,magnetic particles form ordered clusters under the influence of a magnetic field.These clusters act as tiny grinding tools during polishing process,effectively removing materials from the surface of sapphire.Combining finite element simulation and experimental verification,the effects of magnet pole arrangement,number of magnets,and speed ratio on polishing effect have been systematicly anelyzed.The simulation model accurately simulates the interaction between magnetic fields and magnetic particles,revealing the correlation between magnetization pressure and the number,the arrangements of magnets,as well as the relationship between abrasive grain trajectory distribution and length with respect to speed ratios.Results:The simulation results show that with the increase in the number of magnets,magnetic pressure initially remains constant and then significantly increases.When the magnets are arranged alternately with NS,the magnetization pressure is significantly higher than when they are aligned in the same pole direction.This indicates that alternating arrangement of magnetic poles can more effectively enhance magnetic field effects and thus improve polishing efficiency.In addition,different speed ratios can significantly change the abrasive particle trajectory lengths,thereby affecting material removal rates.The experimental results confirm the simulation conclusion:when there are 18 magnets arranged alternately in NS direction and the speed ratio is-50:400,the material removal rate reaches 223.8 nm/min,with a minimum surface roughness of 5 nm.This result indicates that the optimized process parameters can significantly improve the polishing efficiency and surface quality of sapphire wafers,while maintaining good processing stability.Conclusions:This study achieved efficient polishing of sapphire chips by optimizing the magnet arrangement(18 circumferential distribution,NS alternate arrangement)and speed ratio(-50:400).The optimized process not only significantly improves the material removal rate,but also greatly reduces surface roughness.关键词
磁辅助抛光/磁化压力/磨粒轨迹长度/材料去除率/表面粗糙度Key words
magnetic-assisted polishing/magnetizing pressure/length of abrasive tracks/material removal rate/surface roughness分类
矿业与冶金引用本文复制引用
叶卉,王健,时政钰,刘忠祥,王泽华,姜晨..蓝宝石晶片高效磁辅助抛光工艺参数研究[J].金刚石与磨料磨具工程,2026,46(4):556-568,13.基金项目
国家自然科学基金(62305211). （62305211）
